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2N339 DM74S157 16245 SIS990DN MBT3904 7302001 BAL99 F1B1512V
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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION *With TO-126 package *High current *Complement to type BD189 APPLICATIONS *For use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits.
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
BD190
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Base current Total power dissipation Junction temperature Storage temperature Tmb770 Open emitter Open base Open collector CONDITIONS VALUE -70 -60 -5 -4 -2 40 -65~150 -65~150 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-a PARAMETER Thermal resistance, junction to case VALUE 3.12 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD190
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(SUS)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT
Collector-emitter sustaining voltage
IC=-0.1A; IB=0 IC=-2.0A; IB=-0.2A IC=-2A ; VCE=-2V VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2A ; VCE=-2V IC=-1.0A; VCE=-10V ;f=1.0MHz
-60
V
Collector-emitter saturation voltage
-1.0
V
Base-emitter on voltage
-1.5
V
Collector cut-off current
-0.1
mA
Emitter cut-off current
-1.0
mA
DC current gain
40
DC current gain
15
Transition frequency
2.0
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD190
Fig.2 Outline dimensions
3


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